Jit, S., Centre for Research in Microelectronics, Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi 221005, India

• Journal of Atomic, Molecular, Condensed Matter and Nano Physics Vol. 1 No. 1 (2014) - Research Article
  Depletion Layer Modeling for Short Gate Length Non-Uniformly Doped GaAs MESFET Under Dark and Illuminated Condition
  Abstract  PDF