Layered TMDFETS for Nano Devices: A Short Review

Subhra Dhar, Manisha Pattanaik


Two-dimensional semiconducting materials of the transition-metal-dichalcogenide (TMD) family, such as MoS\({}_{2}\) and WSe\({}_{2}\), have been intensively investigated in the past few years, and are considered as workable contenders for next-generation electronic devices. In this very brief review, we provide an evaluation of devices based on monolayer and multi layer two-dimensional materials, outlining their prospects as a technological option for low power transistor designs. Our study revealed that the two dimensional transition-metal-dichalcogenide are versatile materials which may be used as a single layer or multi layered with diverse properties enabling to suit a wide range of low power applications. Further study divulges that experimental investigations of monolayer TMD transistors encourage workers with excellent carrier mobilities required for low power applications, whereas multilayer TMD transistors reveal WS\({}_{2}\) to be an excellent channel material for making of high performance FET required for energy efficient electronic applications. We understand that this work will provide an important step towards the design and performance evaluation of FETs in low power applications based on two-dimensional materials. Further, the results obtained due to the TMDs so far, prove beneficial to both states of FET operation i.e. ON state and OFF state, when compared to conventional materials.


Monolayer; Multilayer 2D materials; Transition metal dichalcogenides; MoS\(_2\) transistors; Low power

Full Text:



Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman and M. S. Strano, Nature Nanotechnology 7, 11 (2012), DOI: 10.1038/nnano.2012.193.

S. Ahmed and J. Yi, Nano-Micro Letters 9(4), (2017), DOI: 10.1007/s40820-017-0152-6.

H. Wang, A. Hsu, J. Wu, J. Kong and T. Palacios, IEEE Electron Device Letters 31, 906 (2010), DOI: 10.1109/LED.2010.2052017.

L. Yu, D. El-Damak, S. Ha, S. Rakheja, X. Ling, J. Kong, D. Antoniadis, A. Chandrakasan and T. Palacios, Symposium on VLSI technology, pp. T144–T145 (2015), DOI: 10.1109/VLSIT.2015.7223655.

R. Cheng, S. Jiang, Y. Chen, Y. Liu , N. Weiss, H. C. Cheng, H. Wu, Y. Huang and X. Duan, Nat. Communications 5, 5143 (2014), DOI: 10.1038/ncomms6143.

M. Sanaullah and M. H. Chowdhury, in IEEE International Symposium on Circuits and Systems (ISCAS), pp. 1929–1932 (2015), DOI: 10.1109/ISCAS.2015.7169050 .

X. Li and H. J. Zhu, Materiomics 1, 1 (2015), DOI: 10.1016/j.jmat.2015.03.003.

H. Liu, A. T. Neal, Z. Zhu, Z. Luo, X. Xu, D. Tománek and P. D. Ye, ACS Nano 8, 4 (2014), DOI: 10.1021/nn501226z.

X.W. Jiang, J.W. Luo, S. S. Li and L.W.Wang, in IEEE Electron Devices Meeting (IEDM), pp. 12–4 (2015), DOI: 10.1109/IEDM.2015.7409683.

T. Kanazawa, T. Amemiya, A. Ishikawa, V. Upadhyaya, K. Tsuruta, T. Tanaka and Y. Miyamoto, Scientific Reports 6, 22277 (2016), DOI: 10.1038/srep22277.

H. Wang, L. Yu, H.-Y Lee, W. Fang, A. Hsu, P. Herring, M. Chin, M. Dubey, J.-L. Li, J. Kong and T. Palacios, in IEEE Electron Devices Meeting (IEDM), pp. 4–6 (2012), DOI: 10.1109/IEDM.2012.6478980.

D. Lembke, S. Bertolazzi and A. Kis, Accounts of Chemical Research 48, 1 (2015), DOI: 10.1021/ar500274q.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti and A. Kis, Nature Nanotechnology 6, 3 (2011), DOI: 10.1038/nnano.2010.279.

Y. Y. Chen, Z. Sun and D. Chen, in Proc. of the 52nd Annual Design Automation Conference, p. 140, AC (2015).

Y. Zhang, H. Li, H. Wang, H. Xie, R. Liu, S. L. Zhang and Z. J. Qiu, Scientific Reports 6, 29615 (2016), DOI: 10.1038/srep29615.

R. Yang, Z. Wang and P. X. L. Feng, Nanoscale 6, 21 (2014), DOI: 10.1039/C4NR03472D.

N. R. Pradhan, D. Rhodes, S. Memaran, J. M. Poumirol, D. Smirnov, S. Talapatra and P. M. Ajayan, Scientific Reports 5, 8979 (2015), DOI: 10.1038/srep08979.

X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao and J. Wei, ACS Nano 8, 10 (2014), DOI: 10.1021/nn505253.

G. V. Resta, T. Agarwal, D. Lin, I. P. Radu, F. Catthoor, P. E. Gaillardon and G. De Micheli, Scientific Reports 7, 45556 (2017), DOI: 10.1038/srep45556.

V. K. Kumar, Large Area MoS2: Growth and Device Characteristics, Doctoral dissertation, G28449 (2018).

W. Liu, J. Kang, D. Sarkar, Y. Khatami, D. Jena and K. Banerjee, Nano Letters 13, 5 (2013), DOI: 10.1021/nl304777e.

T. A. Ameen, H. Ilatikhameneh, G. Klimeck and R. Rahman, Scientific Reports 6, 28515 (2016), DOI: 10.1038/srep28515.



  • There are currently no refbacks.

RGN Journal Management System is fully compatible with all dialects of \(\rm\LaTeX\) and \(\sf MathML\)

  eISSN 2349-2716; pISSN 2349-6088