Depletion Layer Modeling for Short Gate Length Non-Uniformly Doped GaAs MESFET Under Dark and Illuminated Condition

Shweta Tripathi, S. Jit

Abstract


This paper presents an analytical expression for the depletion region height of short gate length GaAs MESFET with non-uniform doping profile in the channel region. Both, dark as well as illuminated conditions have been considered for model formulation. Depletion region height sensitivities on the doping parameters have also been demonstrated.

Keywords


Depletion region; GaAs MESFET; Illumination; Non-uniform doping

Full Text:

PDF

References


J. Rodriguez-Tellez, K. A. Mezheg, N. T. AIi, T. Fernandei, A. Mediavilla, A. Tazon and C. Navarro, Optically controlled 2.4GHz MMIC Amplifier, in Proc. of 10th International Conference on Electronics, Circuits & Systems (ICECS), 970–973 (2003).

J. M. Zamanillo, J. Portilla, C. Navarro and C. Pérez-Vega, Optoelectronic control of a MMIC VCO at Ku band, in Proc. of 5th WSEAS International Conference on Electronics, Hardware, Wireless and Optical Communications, 138–141 (2007).

S.P. Chin and C. Y. Wu, A new two dimensional model for the potential distribution of short gate length MESFETs and its application, IEEE Trans. Electron Device 39, 1928–1937 (1992).

S. P. Chin and C. Y. Wu, A New I-V Model for Short Gate-Length MESFETs, IEEE Trans. Electron Devices 40, 712–720 (1993).

P. Chakrabarti, M. Madheswaran, A. Gupta and N. A. Khan, Numerical simulation of an ionimplanted GaAs OPFET, IEEE Trans. Electron Device 46, 1360–1366 (1998).

A. Dasgupta and S. K. Lahiri, A novel analytical threshold voltage model of MOSFETs with implanted channels, Int. J. Electronics 61, 655–669 (1986).

S. A. Bashar, Study of Indium Tin Oxide (ITO) for Novel Optoelectronic Devices, Ph.D. Thesis, King's College of London, University of London (1998).

A. Dasgupta and S. K. Lahiri, A two-dimensional analytical model of threshold voltages of shortchannel MOSFETs with Gaussian-doped channels, IEEE Trans. Electron Devices 35, 390–392 (1988).

S. Bose, M. Gupta and R.S. Gupta, Id-Vd characteristics of optically biased short channel GaAs MESFET, Microelectron J. 32, 241-247 (2001).

S. M. Sze, Physics of semiconductor devices, 2nd editoin, Wiley, New York (1981).

S. Kabra, H. Kaur, S. Haldar, M. Gupta and R. S. Gupta, Two-dimensional subthreshold analysis of sub-micron GaN MESFET, Microelectron. J. 38, 547–555 (2007).

S. Jit, G. Bandhawakar and B. B. Pal, Analytical Modeling of a DCFL Inverter Using Normally-off GaAs MESFETs Under Dark and Illuminated Conditions, Solid-State Electron. 49, 628–633 (2005).

S. Tripathi and S. Jit, A two-dimensional analytical model for the gate-source and gate-drain capacitances of ion-implanted short-channel GaAs metal semiconductor field effect transistor under dark and illuminated conditions, J. Appl. Phys. 109, 053102 (2011).




DOI: http://dx.doi.org/10.26713%2Fjamcnp.v1i1.229

Refbacks

  • There are currently no refbacks.




RGN Journal Management System is fully compatible with all dialects of \(\rm\LaTeX\) and \(\sf MathML\)

  eISSN 2349-2716; pISSN 2349-6088