TRIPATHI, S.; JIT, S. Depletion Layer Modeling for Short Gate Length Non-Uniformly Doped GaAs MESFET Under Dark and Illuminated Condition. Journal of Atomic, Molecular, Condensed Matter and Nano Physics, [S. l.], v. 1, n. 1, p. 37–43, 2014. DOI: 10.26713/jamcnp.v1i1.229. Disponível em: http://www.rgnpublications.com/journals/index.php/jamcnp/article/view/229. Acesso em: 4 may. 2024.